Invention Grant
- Patent Title: Semiconductor device and memory system
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Application No.: US17230519Application Date: 2021-04-14
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Publication No.: US11521672B2Publication Date: 2022-12-06
- Inventor: Hyeokjun Choi , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2020-0105421 20200821
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C11/4091 ; G11C11/406 ; G11C11/4076 ; G11C11/408 ; G11C11/4096

Abstract:
A semiconductor device includes: a multi-level receiver including N sense amplifiers and a decoder decoding an output of the N sense amplifiers, each of the N sense amplifiers receiving a multi-level signal having M levels and a reference signal (where M is a natural number, higher than 2, and where N is a natural number, lower than M); a clock buffer receiving a reference clock signal; and a clock controller generating N clock signals using the reference clock signal, inputting the N clock signals to the N sense amplifiers, respectively, and individually determining a phase of each of the N clock signals using the output of the N sense amplifiers.
Public/Granted literature
- US20220059155A1 SEMICONDUCTOR DEVICE AND MEMORY SYSTEM Public/Granted day:2022-02-24
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