PROBE DEVICE, TEST DEVICE, AND TEST METHOD FOR SEMICONDUCTOR DEVICE

    公开(公告)号:US20220091158A1

    公开(公告)日:2022-03-24

    申请号:US17308974

    申请日:2021-05-05

    IPC分类号: G01R1/20 G01R1/067 G01R31/26

    摘要: A probe device includes a first receiving terminal configured to receive a multi-level signal having M levels, where M is a natural number greater than 2; a second receiving terminal configured to receive a reference signal; a receiving buffer including a first input terminal connected to the first receiving terminal, a second input terminal connected to the second receiving terminal, and an output terminal configured to output the multi-level signal based on signals received from the first and second input terminals; and a resistor circuit comprising a plurality of resistors connected to the first and second receiving terminals and determining a magnitude of a termination resistance of the first and second receiving terminals.

    Impedance calibration circuit and memory device including the same

    公开(公告)号:US11115021B2

    公开(公告)日:2021-09-07

    申请号:US17021728

    申请日:2020-09-15

    摘要: An impedance calibration circuit includes a first code generation circuit connected to a first reference resistor, and configured to generate a first code for forming a resistance based on the first reference resistor, by using the first reference resistor; a second code generation circuit configured to form a resistance of a second reference resistor less than the resistance of the first reference resistor, based on the first code, and generate a second code by using the second reference resistor; and a target impedance code generation circuit configured to generate a target impedance code based on the first code, the second code, and a target impedance value, and form an impedance having the target impedance value in a termination driver connected to the impedance calibration circuit, based on the target impedance code.

    Semiconductor device and memory system

    公开(公告)号:US11521672B2

    公开(公告)日:2022-12-06

    申请号:US17230519

    申请日:2021-04-14

    摘要: A semiconductor device includes: a multi-level receiver including N sense amplifiers and a decoder decoding an output of the N sense amplifiers, each of the N sense amplifiers receiving a multi-level signal having M levels and a reference signal (where M is a natural number, higher than 2, and where N is a natural number, lower than M); a clock buffer receiving a reference clock signal; and a clock controller generating N clock signals using the reference clock signal, inputting the N clock signals to the N sense amplifiers, respectively, and individually determining a phase of each of the N clock signals using the output of the N sense amplifiers.

    Memory device supporting a high-efficient input/output interface and a memory system including the memory device

    公开(公告)号:US11461251B2

    公开(公告)日:2022-10-04

    申请号:US17326513

    申请日:2021-05-21

    IPC分类号: G06F13/16 H04L25/49

    摘要: A memory system including: a memory controller to transmit a command, an address, or data to a first channel based on a data input/output signal having one of N (N is a natural number of three or more) different voltage levels during a first time interval, the memory controller transmitting the command, the address, or the data not transmitted during the first time interval to the first channel based on the data input/output signal having one of two different voltage levels during a second time interval; and a memory device to sample the data input/output signal received via the first channel during the first time interval in a pulse amplitude modulation (PAM)-N mode, the memory device sampling the data input/output signal received via the first channel during the second time interval in a non return to zero (NRZ) mode.

    Multi-mode transmission line and storage device including the same

    公开(公告)号:US11522261B2

    公开(公告)日:2022-12-06

    申请号:US16730277

    申请日:2019-12-30

    摘要: A multi-mode transmission line includes a first and second conductive layers, first and second waveguide walls, a strip line, and a blind conductor. The second conductive layer that is formed over the first conductive layer. The first waveguide wall is elongated in a first direction and is in contact with the first conductive layer and the second conductive layer in a vertical direction. The second waveguide wall is elongated in the first direction parallel to the first waveguide wall and is in contact with the first conductive layer and the second conductive layer in the vertical direction. The strip line is formed between the first and second conductive layers and between the first and second waveguide walls. The blind conductor is connected to one of the first conductive layer, the second conductive layer, the first waveguide wall, or the second waveguide wall.

    Impedance calibration circuit and memory device including the same

    公开(公告)号:US11502687B2

    公开(公告)日:2022-11-15

    申请号:US17389148

    申请日:2021-07-29

    摘要: An impedance calibration circuit includes a first code generation circuit connected to a first reference resistor, and configured to generate a first code for forming a resistance based on the first reference resistor, by using the first reference resistor; a second code generation circuit configured to form a resistance of a second reference resistor less than the resistance of the first reference resistor, based on the first code, and generate a second code by using the second reference resistor; and a target impedance code generation circuit configured to generate a target impedance code based on the first code, the second code, and a target impedance value, and form an impedance having the target impedance value in a termination driver connected to the impedance calibration circuit, based on the target impedance code.

    TRANSMITTERS FOR GENERATING MULTI-LEVEL SIGNALS AND MEMORY SYSTEM INCLUDING THE SAME

    公开(公告)号:US20220075725A1

    公开(公告)日:2022-03-10

    申请号:US17320460

    申请日:2021-05-14

    摘要: A multi-level signal transmitter includes a voltage selection circuit, which is configured to select one amongst a plurality of driving voltages, which have different voltage levels, in response to input data including at least two bits of data therein. A driver circuit is also provided, which is configured to generate an output data signal as a multi-level signal, in response to the selected one of the plurality of driving voltages. This selected signal is provided as a body bias voltage to at least one transistor within the driver circuit. This driver circuit may include a totem-pole arrangement of first and second MOS transistors having respective first and second body bias regions therein, and at least one of the first and second body bias regions may be responsive to the selected one of the plurality of driving voltages.