Invention Grant
- Patent Title: Selective deposition of a protective layer to reduce interconnect structure critical dimensions
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Application No.: US17012427Application Date: 2020-09-04
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Publication No.: US11521896B2Publication Date: 2022-12-06
- Inventor: Hsi-Wen Tien , Chung-Ju Lee , Chih Wei Lu , Hsin-Chieh Yao , Yu-Teng Dai , Wei-Hao Liao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnick, LLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L21/311 ; H01L27/092

Abstract:
In some embodiments, the present disclosure relates to an integrated chip that includes a lower conductive structure arranged over a substrate. An etch stop layer is arranged over the lower conductive structure, and a first interconnect dielectric layer is arranged over the etch stop layer. The integrated chip further includes an interconnect via that extends through the first interconnect dielectric layer and the etch stop layer to directly contact the lower conductive structure. A protective layer surrounds outermost sidewalls of the interconnect via.
Public/Granted literature
- US20210193513A1 SELECTIVE DEPOSITION OF A PROTECTIVE LAYER TO REDUCE INTERCONNECT STRUCTURE CRITICAL DIMENSIONS Public/Granted day:2021-06-24
Information query
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