Invention Grant
- Patent Title: Contact slots forming method applying photoresists
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Application No.: US17016425Application Date: 2020-09-10
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Publication No.: US11527409B2Publication Date: 2022-12-13
- Inventor: Wei-Lin Liu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/8234

Abstract:
Contact slots forming method applying photoresists include the following steps. A dielectric layer and a hard mask layer are formed on a substrate sequentially. A first patterned photoresist layer is formed over the hard mask layer, wherein the first patterned photoresist layer includes island patterns connecting to each other by connecting dummy parts. The hard mask layer is etched using the first patterned photoresist layer to form a patterned hard mask layer including island patterns connecting to each other by connecting dummy parts. A second patterned photoresist layer is formed over the patterned hard mask layer. The dielectric layer is etched using the second patterned photoresist layer and the patterned hard mask layer as a mask to form contact holes in the dielectric layer.
Public/Granted literature
- US20220076954A1 CONTACT SLOTS FORMING METHOD APPLYING PHOTORESISTS Public/Granted day:2022-03-10
Information query
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