Invention Grant
- Patent Title: Semiconductor devices and electronic systems including an etch stop material, and related methods
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Application No.: US16216088Application Date: 2018-12-11
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Publication No.: US11527548B2Publication Date: 2022-12-13
- Inventor: Haoyu Li , Everett A. McTeer , Christopher W. Petz , Yongjun J. Hu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11556 ; H01L27/1157 ; H01L21/311 ; H01L27/11524 ; H01L21/28
Abstract:
A semiconductor device comprises a semiconductor material extending through a stack of alternating levels of a conductive material and an insulative material, and a material comprising cerium oxide and at least another oxide adjacent to the semiconductor material. Related electronic systems and methods are also disclosed.
Public/Granted literature
- US20200185406A1 SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING AN ETCH STOP MATERIAL, AND RELATED METHODS Public/Granted day:2020-06-11
Information query
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