Invention Grant
- Patent Title: Heteroepitaxial structure and method for forming the same, and nanogap electrode
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Application No.: US17213527Application Date: 2021-03-26
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Publication No.: US11529794B2Publication Date: 2022-12-20
- Inventor: Yutaka Majima , YoonYoung Choi , Ikuko Shimada , Ryo Toyama , Mingyue Yang
- Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Applicant Address: JP Kawaguchi
- Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee Address: JP Kawaguchi
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JPJP2018-187109 20181002,JPJP2019-005299 20190116
- Main IPC: B32B15/01
- IPC: B32B15/01 ; C23C18/31 ; C30B25/18 ; B82Y40/00
Abstract:
A heteroepitaxial structure includes a first metal portion having a polycrystalline structure, a second metal portion on the first metal portion, the second metal portion has an island-shaped structure on the first metal portion, the second metal portion is provided corresponding to at least one crystalline grain exposed to a surface of the first metal portion, and the second metal portion and the at least one crystalline grain have a heteroepitaxial interface.
Public/Granted literature
- US20210213707A1 HETEROEPITAXIAL STRUCTURE AND METHOD FOR FORMING THE SAME, AND NANOGAP ELECTRODE Public/Granted day:2021-07-15
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