Abstract:
Art electrode pair enables the performance of a device to be accurately delivered, a method for manufacturing the same. An electrode pair 10, wherein one electrode 12A and the other electrode 12B are provided on the same plane so as to face each other with a gap 17 therebetween, and portions of the one electrode 12A and the oilier electrode 12B facing each other are respectively curved so as to get away from the plane along a direction nearing each other. This electrode pair 10 is manufactured by preparing, as a sample, a substrate on which a pair of seed electrodes is formed with a space therebetween so as to have an initial gap, immersing the sample in an electroless plating solution, changing the electroless plating solution after a lapse of a certain period of time, and adjusting the number of times of changing.
Abstract:
A monomolecular transistor including a first electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a second electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a third electrode insulated from the first electrode and the second electrode, a π-conjugated molecule having a π-conjugated skeleton. The first metal particle and the second metal particle face each other. The third electrode is arranged adjacent to the gap in which the first metal particle and the second metal particle face each other, and is spaced from the first metal particle and the second metal particle, the π-conjugated molecule is arranged in a gap between the first metal particle and the second metal particle.
Abstract:
Provided is an electronic element that functions as a switch or memory without using metal nanoparticle. The electronic element includes: one electrode 5A and an other electrode 5B arranged to have a nanogap therebetween; and halide ion 6 provided between the electrodes 5A and 5B; and on one of the electrodes.
Abstract:
Provided is an electronic element that functions as a switch or memory without using metal nanoparticle. The electronic element comprises: one electrode 5A and other electrode 5B arranged to have a nanogap therebetween; and halide ion 6 provided between the electrodes 5A and 5B; and on one of the electrodes. When voltage between the electrodes 5A and 5B is continuously varied from a positive value to a negative value and from a negative value to a positive value, a waveform of electrical current flowing between the electrodes 5A and 5B is asymmetrical. The state of the halide ion 6 is varied in accordance with a value of the voltage that is applied between the electrodes 5A and 5B so that an information-writing-state and an information-erasing-state are maintained in accordance with a value of the electric current that flows between the electrodes 5A and 5B.
Abstract:
This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer 2; one electrode 5A and the other electrode 5B provided to have a nanogap on the first insulating layer 2; a metal nanoparticle or a functional molecule provided between the one electrode 5A and the other electrode 5B; a second insulating layer 8 provided on the first insulating layer 2, and on the one electrode 5A and the other electrode 5B to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.
Abstract:
A heteroepitaxial structure includes a first metal portion having a polycrystalline structure, a second metal portion on the first metal portion, the second metal portion has an island-shaped structure on the first metal portion, the second metal portion is provided corresponding to at least one crystalline grain exposed to a surface of the first metal portion, and the second metal portion and the at least one crystalline grain have a heteroepitaxial interface.
Abstract:
Provided is a logical operation element that performs logical operations on three or more inputs using a single unique device. The logical operation element 30 is provided with an electrode 5A and the other electrode 5B that are provided to have a nanogap, a metal nanoparticle 7 arranged between the electrode 5A and the other electrode 5B in insulated state, and a plurality of gate electrodes 5C, 5D, 11, 11A, 11B for adjusting a charge of the metal nanoparticle 7. Electric current that flows between the electrode 5A and the other electrode 5B is controlled in accordance with the voltage applied to three or more of the gate electrodes 5C, 5D, 11, 11A, 11B.
Abstract:
A nanodevice capable of controlling the state of electric charge of a metal nanoparticle is provided. The device includes: nanogap electrodes 5 including one electrode 5A and the other electrode 5B disposed so as to have a nanosize gap in between; a nanoparticle 7 placed between the nanogap electrodes 5; and a plurality of gate electrodes 9. At least one of the plurality of gate electrodes 9 is used as a floating gate electrode to control the state of electric charge of the nanoparticle 7, which achieves a multivalued memory and rewritable logical operation.
Abstract:
A nanodevice capable of controlling the state of electric charge of a metal nanoparticle is provided. The device includes: nanogap electrodes 5 including one electrode 5A and the other electrode 5B disposed so as to have a nanosize gap in between; a nanoparticle 7 placed between the nanogap electrodes 5; and a plurality of gate electrodes 9. At least one of the plurality of gate electrodes 9 is used as a floating gate electrode to control the state of electric charge of the nanoparticle 7, which achieves a multivalued memory and rewritable logical operation.
Abstract:
Art electrode pair enables the performance of a device to be accurately delivered, a method for manufacturing the same. An electrode pair 10, wherein one electrode 12A and the other electrode 12B are provided on the same plane so as to face each other with a gap 17 therebetween, and portions of the one electrode 12A and the oilier electrode 12B facing each other are respectively curved so as to get away from the plane along a direction nearing each other. This electrode pair 10 is manufactured by preparing, as a sample, a substrate on which a pair of seed electrodes is formed with a space therebetween so as to have an initial gap, immersing the sample in an electroless plating solution, changing the electroless plating solution after a lapse of a certain period of time, and adjusting the number of times of changing.