- Patent Title: Precision tuning of a page or word of non-volatile memory cells and associated high voltage circuits for an analog neural memory array in an artificial neural network
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Application No.: US17024410Application Date: 2020-09-17
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Publication No.: US11532354B2Publication Date: 2022-12-20
- Inventor: Hieu Van Tran , Thuan Vu , Stephen Trinh , Stanley Hong , Anh Ly , Steven Lemke , Vipin Tiwari , Nhan Do
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP US
- Main IPC: G11C11/54
- IPC: G11C11/54 ; G11C16/04 ; G11C16/08 ; G11C16/16 ; G11C16/34 ; G06N3/063 ; G11C16/10
Abstract:
Numerous embodiments for performing tuning of a page or a word of non-volatile memory cells in an analog neural memory are disclosed. High voltage circuits used to generate high voltages applied to terminals of the non-volatile memory cells during the precision tuning process are also disclosed. Programming sequences for the application of the voltages to the terminals to minimize the occurrence of disturbances during tuning are also disclosed.
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