Invention Grant
- Patent Title: Non-volatile memory device, storage device including the same, and read method thereof
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Application No.: US17380289Application Date: 2021-07-20
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Publication No.: US11532361B2Publication Date: 2022-12-20
- Inventor: Minseok Kim , Hyunggon Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2020-0138431 20201023
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/26 ; G11C16/08 ; G11C16/24 ; G11C16/30 ; G11C7/10

Abstract:
A non-volatile memory device receives a read command and an address from a controller, and performs a data recovery read operation in response to the read command. In the data recovery read operation, an operation of obtaining aggressor group information from a memory cell connected to a word line adjacent to a word line selected according to the address, and an operation of recovering data corresponding to the obtained aggressor group information in a memory cell connected to the word line selected according to the address, are repeatedly performed on each of a plurality of aggressor groups.
Public/Granted literature
- US20220130463A1 NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND READ METHOD THEREOF Public/Granted day:2022-04-28
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