Methods of operating a memory, and memories having a controller configured to cause the memory to perform such methods, include applying a plurality of first voltage levels to an access line, applying a plurality of second voltage levels to a control gate of a string driver connected to the access line for a first portion of the plurality of first voltage levels with each second voltage level of the plurality of second voltage levels being greater than a respective first voltage level by a first voltage differential, and applying a plurality of third voltage levels to the control gate of the string driver for a second portion of the plurality of first voltage levels with each third voltage level of the plurality of third voltage levels being greater than a respective first voltage level by a second voltage differential less than the first voltage differential.