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公开(公告)号：US10937505B2
公开(公告)日：2021-03-02
申请号：US16412627
申请日：2019-05-15
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Xiaojiang Guo , Guanglei An , Qiang Tang
Abstract: Methods of operating a memory include determining a target voltage level for an access line voltage, determining a target overdrive voltage level for gating the access line voltage to an access line coupled to a plurality of memory cells, generating a voltage level for the access line voltage in response to its target voltage level and generating a voltage level for gating the access line voltage to the access line in response to the target overdrive voltage level, and applying the access line voltage to the access line while applying the voltage level for gating the access line voltage to a control gate of a string driver connected to the access line. Apparatus include a voltage regulator having variable resistance paths between a voltage signal node and an output node, and between the voltage signal node and an input of a comparator of the voltage regulator.
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公开(公告)号：US20190066796A1
公开(公告)日：2019-02-28
申请号：US15693133
申请日：2017-08-31
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Xiaojiang Guo , Guanglei An , Qiang Tang
CPC classification number: G11C16/12 , G11C8/08 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/3459
Abstract: Methods of operating a memory include determining a target voltage level for an access line voltage, determining a target overdrive voltage level for gating the access line voltage to an access line coupled to a plurality of memory cells, generating a voltage level for the access line voltage in response to its target voltage level and generating a voltage level for gating the access line voltage to the access line in response to the target overdrive voltage level, and applying the access line voltage to the access line while applying the voltage level for gating the access line voltage to a control gate of a string driver connected to the access line. Apparatus include a voltage regulator having variable resistance paths between a voltage signal node and an output node, and between the voltage signal node and an input of a comparator of the voltage regulator.
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公开(公告)号：US20210166767A1
公开(公告)日：2021-06-03
申请号：US17176345
申请日：2021-02-16
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Xiaojiang Guo , Guanglei An , Qiang Tang
Abstract: Methods of operating a memory, and memories having a controller configured to cause the memory to perform such methods, include applying a plurality of first voltage levels to an access line, applying a plurality of second voltage levels to a control gate of a string driver connected to the access line for a first portion of the plurality of first voltage levels with each second voltage level of the plurality of second voltage levels being greater than a respective first voltage level by a first voltage differential, and applying a plurality of third voltage levels to the control gate of the string driver for a second portion of the plurality of first voltage levels with each third voltage level of the plurality of third voltage levels being greater than a respective first voltage level by a second voltage differential less than the first voltage differential.
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Patent Agency Ranking
公开(公告)号：US20190267093A1
公开(公告)日：2019-08-29
申请号：US16412627
申请日：2019-05-15
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Xiaojiang Guo , Guanglei An , Qiang Tang
Abstract: Methods of operating a memory include determining a target voltage level for an access line voltage, determining a target overdrive voltage level for gating the access line voltage to an access line coupled to a plurality of memory cells, generating a voltage level for the access line voltage in response to its target voltage level and generating a voltage level for gating the access line voltage to the access line in response to the target overdrive voltage level, and applying the access line voltage to the access line while applying the voltage level for gating the access line voltage to a control gate of a string driver connected to the access line. Apparatus include a voltage regulator having variable resistance paths between a voltage signal node and an output node, and between the voltage signal node and an input of a comparator of the voltage regulator.
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公开(公告)号：US10388382B2
公开(公告)日：2019-08-20
申请号：US15693133
申请日：2017-08-31
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Xiaojiang Guo , Guanglei An , Qiang Tang
Abstract: Methods of operating a memory include determining a target voltage level for an access line voltage, determining a target overdrive voltage level for gating the access line voltage to an access line coupled to a plurality of memory cells, generating a voltage level for the access line voltage in response to its target voltage level and generating a voltage level for gating the access line voltage to the access line in response to the target overdrive voltage level, and applying the access line voltage to the access line while applying the voltage level for gating the access line voltage to a control gate of a string driver connected to the access line. Apparatus include a voltage regulator having variable resistance paths between a voltage signal node and an output node, and between the voltage signal node and an input of a comparator of the voltage regulator.
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公开(公告)号：US11538529B2
公开(公告)日：2022-12-27
申请号：US17176345
申请日：2021-02-16
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Xiaojiang Guo , Guanglei An , Qiang Tang
Abstract: Methods of operating a memory, and memories having a controller configured to cause the memory to perform such methods, include applying a plurality of first voltage levels to an access line, applying a plurality of second voltage levels to a control gate of a string driver connected to the access line for a first portion of the plurality of first voltage levels with each second voltage level of the plurality of second voltage levels being greater than a respective first voltage level by a first voltage differential, and applying a plurality of third voltage levels to the control gate of the string driver for a second portion of the plurality of first voltage levels with each third voltage level of the plurality of third voltage levels being greater than a respective first voltage level by a second voltage differential less than the first voltage differential.
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7.发明授权公开(公告)号：US11024388B2
公开(公告)日：2021-06-01
申请号：US16412661
申请日：2019-05-15
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Xiaojiang Guo , Guanglei An , Qiang Tang
Abstract: Methods of operating a memory include determining a target voltage level for an access line voltage, determining a target overdrive voltage level for gating the access line voltage to an access line coupled to a plurality of memory cells, generating a voltage level for the access line voltage in response to its target voltage level and generating a voltage level for gating the access line voltage to the access line in response to the target overdrive voltage level, and applying the access line voltage to the access line while applying the voltage level for gating the access line voltage to a control gate of a string driver connected to the access line.
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公开(公告)号：US20190267094A1
公开(公告)日：2019-08-29
申请号：US16412661
申请日：2019-05-15
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Xiaojiang Guo , Guanglei An , Qiang Tang
Abstract: Methods of operating a memory include determining a target voltage level for an access line voltage, determining a target overdrive voltage level for gating the access line voltage to an access line coupled to a plurality of memory cells, generating a voltage level for the access line voltage in response to its target voltage level and generating a voltage level for gating the access line voltage to the access line in response to the target overdrive voltage level, and applying the access line voltage to the access line while applying the voltage level for gating the access line voltage to a control gate of a string driver connected to the access line.
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