Invention Grant
- Patent Title: Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory device
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Application No.: US16848846Application Date: 2020-04-15
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Publication No.: US11538986B2Publication Date: 2022-12-27
- Inventor: Qinli Ma , Wei-Chuan Chen , Shu-Jen Han
- Applicant: HeFeChip Corporation Limited
- Applicant Address: HK Sai Ying Pun
- Assignee: HeFeChip Corporation Limited
- Current Assignee: HeFeChip Corporation Limited
- Current Assignee Address: HK Sai Ying Pun
- Agent Winston Hsu
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L27/22 ; H01L43/08 ; H01L43/02
Abstract:
A storage layer of a magnetic tunnel junction (MTJ) element is disclosed. The storage layer having perpendicular magnetic anisotropy includes a first ferromagnetic layer, a first dust layer disposed directly on the first ferromagnetic layer, a second ferromagnetic layer disposed directly on the first dust layer, a second dust layer disposed directly on the second ferromagnetic layer, and a third ferromagnetic layer disposed directly on the second dust layer. A material of the first dust layer is different from a material of the second dust layer.
Public/Granted literature
- US20210328135A1 ASYMMETRIC ENGINEERED STORAGE LAYER OF MAGNETIC TUNNEL JUNCTION ELEMENT FOR MAGNETIC MEMORY DEVICE Public/Granted day:2021-10-21
Information query
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