Invention Grant
- Patent Title: Threshold voltage offset bin selection based on die family in memory devices
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Application No.: US17070526Application Date: 2020-10-14
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Publication No.: US11545227B2Publication Date: 2023-01-03
- Inventor: Michael Sheperek , Bruce A. Liikanen , Steve Kientz , Anita Ekren , Gerald Cadloni
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/10 ; G11C7/04 ; G11C16/32 ; G11C16/30 ; G11C16/26
Abstract:
A measure associated with a characteristic of a die of a memory device is obtained. It is determined whether the measure satisfies a first criterion to group one or more die into a first die family. If it is determined that the measure satisfies the first criterion, the die is associated with the first die family.
Public/Granted literature
- US20220115079A1 THRESHOLD VOLTAGE OFFSET BIN SELECTION BASED ON DIE FAMILY IN MEMORY DEVICES Public/Granted day:2022-04-14
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