- 专利标题： Three-dimensional memory device and method
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申请号： US17157489申请日： 2021-01-25
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公开(公告)号： US11545500B2公开(公告)日： 2023-01-03
- 发明人: Bo-Feng Young , Sai-Hooi Yeong , Han-Jong Chia , Sheng-Chen Wang , Yu-Ming Lin
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L27/11551
- IPC分类号： H01L27/11551 ; H01L27/11519 ; G11C8/14 ; G11C7/18
摘要：
In an embodiment, a device includes: a first dielectric layer having a first sidewall; a second dielectric layer having a second sidewall; a word line between the first dielectric layer and the second dielectric layer, the word line having an outer sidewall and an inner sidewall, the inner sidewall recessed from the outer sidewall, the first sidewall, and the second sidewall; a memory layer extending along the outer sidewall of the word line, the inner sidewall of the word line, the first sidewall of the first dielectric layer, and the second sidewall of the second dielectric layer; and a semiconductor layer extending along the memory layer.
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