- Patent Title: Antiferroelectric perovskite gate oxide for transistor applications
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Application No.: US16024719Application Date: 2018-06-29
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Publication No.: US11552180B2Publication Date: 2023-01-10
- Inventor: Sasikanth Manipatruni , Uygar Avci , Seiyon Kim , Ian Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/78 ; H01L29/423 ; H01L21/28 ; H01L29/66 ; H01L21/02 ; H01L29/24 ; H01L49/02 ; H01L29/786 ; H01L29/49 ; H01L29/06
Abstract:
An integrated circuit structure comprises a substrate. An antiferroelectric gate oxide is above the substrate, the antiferroelectric gate oxide comprising a perovskite material. A gate electrode is over at least a portion of the gate oxide.
Public/Granted literature
- US20200006516A1 ANTIFERROELECTRIC PEROVSKITE GATE OXIDE FOR TRANSISTOR APPLICATIONS Public/Granted day:2020-01-02
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