Invention Grant
- Patent Title: Epitaxial monocrystalline channel for storage transistors in 3-dimensional memory structures and methods for formation thereof
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Application No.: US17329007Application Date: 2021-05-24
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Publication No.: US11557606B2Publication Date: 2023-01-17
- Inventor: Chenming Hu , Wu-Yi Henry Chien , Eli Harari
- Applicant: SUNRISE MEMORY CORPORATION
- Applicant Address: US CA Fremont
- Assignee: SUNRISE MEMORY CORPORATION
- Current Assignee: SUNRISE MEMORY CORPORATION
- Current Assignee Address: US CA Fremont
- Agency: VLP Law Group LLP
- Agent Edward C. Kwok
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11568 ; H01L21/02 ; H01L21/28
Abstract:
A thin-film storage transistor includes (a) first and second semiconductor regions comprising polysilicon of a first conductivity; and (b) a channel region between the first and second semiconductor regions, the channel region comprising single-crystal epitaxial grown silicon, and wherein the thin-film storage transistor is formed above a monocrystalline semiconductor substrate.
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