公开(公告)号：US20210280605A1

公开(公告)日：2021-09-09

申请号：US17329007

申请日：2021-05-24

Applicant: SUNRISE MEMORY CORPORATION

Inventor： Chenming Hu ,  Wu-Yi Henry Chien ,  Eli Harari

IPC: H01L27/11582 ,  H01L27/11568 ,  H01L21/02 ,  H01L21/28

Abstract: A thin-film storage transistor includes (a) first and second semiconductor regions comprising polysilicon of a first conductivity; and (b) a channel region between the first and second semiconductor regions, the channel region comprising single-crystal epitaxial grown silicon, and wherein the thin-film storage transistor is formed above a moncrystlline semiconductor substrate.

公开(公告)号：US11049873B2

公开(公告)日：2021-06-29

申请号：US16578970

申请日：2019-09-23

Applicant: SUNRISE MEMORY CORPORATION

Inventor： Chenming Hu ,  Wu-Yi Henry Chien ,  Eli Harari

IPC: H01L27/11582 ,  H01L27/11568 ,  H01L21/02 ,  H01L21/28

Abstract: A thin-film storage transistor includes (a) first and second semiconductor regions comprising polysilicon of a first conductivity; and (b) a channel region between the first and second semiconductor regions, the channel region comprising single-crystal epitaxial grown silicon, and wherein the thin-film storage transistor is formed above a monocrystalline semiconductor substrate.

公开(公告)号：US11557606B2

公开(公告)日：2023-01-17

申请号：US17329007

申请日：2021-05-24

Applicant: SUNRISE MEMORY CORPORATION

Inventor： Chenming Hu ,  Wu-Yi Henry Chien ,  Eli Harari

IPC: H01L27/11582 ,  H01L27/11568 ,  H01L21/02 ,  H01L21/28

Abstract: A thin-film storage transistor includes (a) first and second semiconductor regions comprising polysilicon of a first conductivity; and (b) a channel region between the first and second semiconductor regions, the channel region comprising single-crystal epitaxial grown silicon, and wherein the thin-film storage transistor is formed above a monocrystalline semiconductor substrate.

公开(公告)号：US20200098789A1

公开(公告)日：2020-03-26

申请号：US16578970

申请日：2019-09-23

Applicant: SUNRISE MEMORY CORPORATION

Inventor： Chenming Hu ,  Wu-Yi Henry Chien ,  Eli Harari

IPC: H01L27/11582 ,  H01L27/11568 ,  H01L21/02 ,  H01L21/28

Abstract: A thin-film storage transistor includes (a) first and second semiconductor regions comprising polysilicon of a first conductivity; and (b) a channel region between the first and second semiconductor regions, the channel region comprising single-crystal epitaxial grown silicon, and wherein the thin-film storage transistor is formed above a monocrystalline semiconductor substrate.