- Patent Title: High electron mobility transistor and fabrication method thereof
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Application No.: US17100935Application Date: 2020-11-22
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Publication No.: US11557666B2Publication Date: 2023-01-17
- Inventor: Yen-Hsing Chen , Yu-Ming Hsu , Tsung-Mu Yang , Yu-Ren Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN202011015488.7 20200924
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/778 ; H01L21/768 ; H01L21/67 ; H01L29/66
Abstract:
A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.
Public/Granted literature
- US20220093778A1 HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF Public/Granted day:2022-03-24
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