Invention Grant
- Patent Title: Method and circuit to isolate body capacitance in semiconductor devices
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Application No.: US16673765Application Date: 2019-11-04
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Publication No.: US11558019B2Publication Date: 2023-01-17
- Inventor: Garming Liang , Simon Chai , Tzu-Jin Yeh , En-Hsiang Yeh , Wen-Sheng Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H03F1/22
- IPC: H03F1/22 ; H03F3/21 ; H01L27/06 ; H01L27/092 ; H03F1/02
Abstract:
Disclosed is an amplifying circuit and method. In one embodiment, an amplifying circuit, includes: a common-gate (CG) amplifier, wherein the CG amplifier comprises a first transistor, wherein source terminal and body terminal of the first transistor is coupled together through a first resistor.
Public/Granted literature
- US20200162041A1 METHOD AND CIRCUIT TO ISOLATE BODY CAPACITANCE IN SEMICONDUCTOR DEVICES Public/Granted day:2020-05-21
Information query
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