发明授权
- 专利标题: Sensor apparatuses with a bypass current path and associated production methods
-
申请号: US17217390申请日: 2021-03-30
-
公开(公告)号: US11561245B2公开(公告)日: 2023-01-24
- 发明人: Klaus Elian , Rainer Markus Schaller , Volker Strutz
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Harrity & Harrity, LLP
- 优先权: DE102020108880.9 20200331
- 主分类号: G01R15/20
- IPC分类号: G01R15/20 ; G01R19/00 ; G01R33/07
摘要:
A sensor apparatus comprises an electrically conductive chip carrier comprising a busbar, a first connection and a second connection, and a differential magnetic field sensor chip which is arranged on the chip carrier and has two sensor elements. The form of the busbar is such that a measurement current path running from the first connection to the second connection through the busbar comprises a main current path and a bypass current path, wherein the main current path and the bypass current path run parallel to one another, and a bypass current flowing through the bypass current path is less than a main current flowing through the main current path. The magnetic field sensor chip is configured to capture a magnetic field induced by the bypass current.
公开/授权文献
信息查询