Invention Grant
- Patent Title: Embedded dual-sided interconnect bridges for integrated-circuit packages
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Application No.: US16912638Application Date: 2020-06-25
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Publication No.: US11562959B2Publication Date: 2023-01-24
- Inventor: Loke Yip Foo , Teong Guan Yew , Choong Kooi Chee
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: MYPI2019005709 20190927
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L23/532 ; H01L23/522

Abstract:
A dual-sided embedded multi-die interconnect bridge provides power and source conduits from the bridge bottom at a silicon portion, in short paths to dice on a die side of an integrated-circuit package substrate. Signal traces are in a metallization on the silicon portion of the dual-sided EMIB. Power, ground and signal vias all emanate from the dual-sided embedded multi-die interconnect bridge, with power and ground entering the bridge from central regions of the silicon portion.
Public/Granted literature
- US20210098375A1 EMBEDDED DUAL-SIDED INTERCONNECT BRIDGES FOR INTEGRATED-CIRCUIT PACKAGES Public/Granted day:2021-04-01
Information query
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