- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US17158078申请日： 2021-01-26
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公开(公告)号： US11563114B2公开(公告)日： 2023-01-24
- 发明人: Matthew David Smith , Hiroshi Ono , Yosuke Kajiwara , Akira Mukai , Masahiko Kuraguchi
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JPJP2020-208394 20201216
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/423
摘要：
According to one embodiment, a semiconductor device includes first, second, third electrodes, a semiconductor member, and a first compound member. The third electrode is between the first and second electrodes in a first direction from the first to second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first, second, third, fourth, and fifth partial regions. A second direction from the first partial region to the first electrode crosses the first direction. The fourth partial region is between the first and third partial regions in the first direction. The fifth partial region is between the third and second partial regions in the first direction. The second semiconductor region includes first and second semiconductor portions. The first compound member includes first, second and third compound regions.
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