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公开(公告)号：US11658235B2
公开(公告)日：2023-05-23
申请号：US15901171
申请日：2018-02-21
发明人： Masahiko Kuraguchi , Yosuke Kajiwara , Miki Yumoto , Hiroshi Ono
IPC分类号： H01L29/778 , H01L29/423 , H01L29/66 , H01L23/528 , H01L23/522 , H01L29/417 , H01L23/482 , H01L29/45 , H01L29/20
CPC分类号： H01L29/7787 , H01L23/4824 , H01L23/5226 , H01L23/5286 , H01L29/41758 , H01L29/4238 , H01L29/42376 , H01L29/66462 , H01L29/66522 , H01L29/7783 , H01L29/7786 , H01L29/2003 , H01L29/4236 , H01L29/452
摘要： According to one embodiment, a semiconductor device includes a first electrode, a first region, and a first insulating layer. The first electrode includes a first electrode portion. The first region contains Ga and N. The first region includes a first subregion, a second subregion, and a third subregion. The first subregion and the third subregion contain at least one first element selected from the group consisting of Ar, B, P, N, and Fe. The first subregion is located between the first electrode portion and the second subregion in a first direction. The second subregion does not contain the first element, or concentration of the first element in the second subregion is lower than concentration of the first element in the first subregion and lower than concentration of the first element in the third subregion. The first insulating layer is provided between the first electrode and the first region.
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公开(公告)号：US11476336B2
公开(公告)日：2022-10-18
申请号：US16787351
申请日：2020-02-11
发明人： Hiroshi Ono , Akira Mukai , Yosuke Kajiwara , Daimotsu Kato , Aya Shindome , Masahiko Kuraguchi
IPC分类号： H01L29/778 , H01L29/205 , H01L29/207 , H01L29/20 , H01L23/29 , H01L29/423 , H01L29/51 , H01L29/40
摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, and a first compound member. A position of the third electrode is between a position of the second electrode and a position of the first electrode. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the third and first partial regions. The fifth partial region is between the second and third partial regions. The second semiconductor layer includes first, second, and third semiconductor regions. The third semiconductor region is between the first partial region and the first electrode. The first compound member includes first compound portions between the third semiconductor region and the first electrode. A portion of the first electrode is between one of the first compound portions and an other one of the first compound portions.
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公开(公告)号：US11251293B2
公开(公告)日：2022-02-15
申请号：US16802315
申请日：2020-02-26
发明人： Yosuke Kajiwara , Hiroshi Ono , Jumpei Tajima , Toshiki Hikosaka , Shinya Nunoue , Masahiko Kuraguchi
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/207 , H01L29/423 , H01L29/36 , H01L29/51 , H01L29/417 , H01L29/06
摘要： According to one embodiment, a semiconductor device includes first to fourth semiconductor regions, and an insulating part. The third electrode is between the first and second electrodes in a first direction from the first electrode toward the second electrode. The first semiconductor region includes Alx1Ga1-x1N and includes first to fifth partial regions. A second direction from the first partial region toward the first electrode crosses the first direction. The second semiconductor region includes Alx2Ga1-x2N and includes sixth and seventh partial regions. The third semiconductor region includes Alx3Ga1-x3N and includes an eighth partial region between the fifth and seventh partial regions. The fourth semiconductor region includes Alx4Ga1-x4N and includes a first portion between the fifth and eighth partial regions. The fourth semiconductor region includes a first element not included the first to third semiconductor regions. The insulating part includes first to third insulating regions.
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公开(公告)号：US11211463B2
公开(公告)日：2021-12-28
申请号：US16799953
申请日：2020-02-25
IPC分类号： H01L29/423 , H01L29/739 , H01L29/778
摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes Alx1Ga1-x1N and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes Alx2Ga1-x2N. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.
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公开(公告)号：US10535744B2
公开(公告)日：2020-01-14
申请号：US16274411
申请日：2019-02-13
发明人： Tatsuo Shimizu , Toshiya Yonehara , Hiroshi Ono , Daimotsu Kato , Akira Mukai
IPC分类号： H01L29/40 , H01L29/20 , H01L29/205 , H01L29/778 , G06F1/18 , H01L29/51 , H01L29/423
摘要： A semiconductor device according to an embodiment includes a first nitride semiconductor layer; a second nitride semiconductor layer on the first nitride semiconductor layer; a first electrode and a second electrode disposed on or above the first nitride semiconductor layer; a gate electrode above the first nitride semiconductor layer; and a gate insulating layer, the gate insulating layer including a silicon oxide film and an aluminum oxynitride film, the aluminum oxynitride film disposed between the first nitride semiconductor layer and the silicon oxide film, a first atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a first position in the aluminum oxynitride film being higher than a second atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a second position in the aluminum oxynitride film, and the second position being closer to the silicon oxide film than the first position.
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公开(公告)号：US10347734B2
公开(公告)日：2019-07-09
申请号：US15889431
申请日：2018-02-06
发明人： Tatsuo Shimizu , Hisashi Saito , Hiroshi Ono , Toshiya Yonehara
IPC分类号： H01L29/15 , H01L29/51 , H01L29/49 , H01L29/778 , H01L21/225 , H01L21/28 , H01L29/417 , H01L29/423
摘要： A semiconductor device includes a nitride semiconductor layer, a first electrode and second electrode on the nitride semiconductor layer, a gate electrode, and a gate insulating layer between the nitride semiconductor layer and the gate electrode. The gate insulating layer has a first oxide region containing at least any one element of aluminum and boron, gallium, and silicon. When a distance between the first end portion and the second end portion of the first oxide region is defined as d1, and a position separated by d1/10 from the first end portion toward the second end portion is defined as a first position, an atomic concentration of gallium at the first position is 80% or more and 120% or less of that of the at least any one element.
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公开(公告)号：US20190115461A1
公开(公告)日：2019-04-18
申请号：US16118603
申请日：2018-08-31
发明人： Toshiya Yonehara , Tatsuo Shimizu , Hiroshi Ono , Daimotsu Kato
IPC分类号： H01L29/778 , H01L29/49 , H01L29/20 , H01L29/417 , H01L29/423 , H01L23/532 , H01L29/06
CPC分类号： H01L29/778 , H01L23/5329 , H01L29/0649 , H01L29/2003 , H01L29/40111 , H01L29/41725 , H01L29/4232 , H01L29/42336 , H01L29/42352 , H01L29/4236 , H01L29/4238 , H01L29/4966 , H01L29/513 , H01L29/516 , H01L29/6684 , H01L29/7786 , H01L29/78391
摘要： In one embodiment, a semiconductor device is provided with a semiconductor layer made of a nitride semiconductor, a first gate electrode, a first structure body between the first gate electrode and the semiconductor layer, and a first insulating layer between the semiconductor layer and the first structure body. The first structure body has a first intermediate layer made of a conductor to suppress generation of charges at respective interfaces with adjacent layers, a first layer having dielectric property between the first gate electrode and the first intermediate layer, and a second layer having dielectric property between the first gate electrode and the first layer, and has dipoles at an interface between the first layer and the second layer.
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公开(公告)号：US09590009B2
公开(公告)日：2017-03-07
申请号：US14823193
申请日：2015-08-11
发明人： Jumpei Tajima , Hiroshi Ono , Toshihide Ito , Kenjiro Uesugi , Shinya Nunoue
IPC分类号： H01L33/62 , H01L27/15 , H01L33/38 , H01L33/60 , H01L25/075 , H01L33/40 , H01L33/20 , H01L33/46
CPC分类号： H01L27/156 , H01L25/0753 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/46 , H01L33/62
摘要： A semiconductor light emitting element includes a base body, a first semiconductor layer, a second semiconductor layer, a first light emitting layer, a first conductive layer, a third semiconductor layer, a fourth semiconductor layer, a second light emitting layer, a second conductive layer, a first member, and a second member. The first member includes a first end portion and a second end portion. The first end portion is positioned between the base body and the first conductive layer and electrically connected to the first conductive layer, the second end portion not overlapping the second conductive layer. The second member includes a third end portion and a fourth end portion. The third end portion is positioned between the base body and the second conductive layer and electrically connected to the second conductive layer. The fourth end portion is electrically connected to the second end portion.
摘要翻译： 半导体发光元件包括基体，第一半导体层，第二半导体层，第一发光层，第一导电层，第三半导体层，第四半导体层，第二发光层，第二导电层 层，第一构件和第二构件。 第一构件包括第一端部和第二端部。 第一端部位于基体和第一导电层之间并且电连接到第一导电层，第二端部不与第二导电层重叠。 第二构件包括第三端部和第四端部。 第三端部位于基体和第二导电层之间并且电连接到第二导电层。 第四端部电连接到第二端部。
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公开(公告)号：US20170025578A1
公开(公告)日：2017-01-26
申请号：US15053266
申请日：2016-02-25
摘要： According to one embodiment, a nitride semiconductor element includes a p-type semiconductor layer and a p-side electrode. The p-type semiconductor layer includes a nitride semiconductor, and has a first surface. The p-side electrode contacts the first surface. The first surface is a semi-polar plane. The first surface includes a plurality of protrusions. A height of the protrusions along a first direction is not less than 1 nanometer and not more than 5 nanometers. The first direction is from the p-type semiconductor layer toward the p-side electrode. A density of the protrusions in the first surface is more than 1.0×1010/cm2 and not more than 6.1×1010/cm2.
摘要翻译： 根据一个实施例，氮化物半导体元件包括p型半导体层和p侧电极。 p型半导体层包括氮化物半导体，并且具有第一表面。 p侧电极接触第一表面。 第一个表面是半极性平面。 第一表面包括多个突起。 沿着第一方向的突起的高度不小于1纳米且不大于5纳米。 第一方向是从p型半导体层向p侧电极。 第一表面中的突起的密度大于1.0×10 10 / cm 2且不大于6.1×10 10 / cm 2。
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公开(公告)号：US11888040B2
公开(公告)日：2024-01-30
申请号：US17987351
申请日：2022-11-15
IPC分类号： H01L29/423 , H01L29/739 , H01L29/778
CPC分类号： H01L29/4232 , H01L29/7395 , H01L29/7787
摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes Alx1Ga1-x1N and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes Alx2Ga1-x2N. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.
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