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公开(公告)号：USRE49962E1
公开(公告)日：2024-05-07
申请号：US17733818
申请日：2022-04-29
发明人： Masahiko Kuraguchi , Yosuke Kajiwara , Aya Shindome , Hiroshi Ono , Daimotsu Kato , Akira Mukai
IPC分类号： H01L29/778 , H01L21/02 , H01L29/20 , H01L29/205 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/66
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/41725 , H01L29/4236 , H01L29/42364 , H01L29/42376 , H01L29/452 , H01L29/4966 , H01L29/66462 , H01L29/7786 , H01L21/02164 , H01L21/0217 , H01L21/0254 , H01L29/401
摘要： According to one embodiment, a semiconductor device includes first and second regions, a first insulating portion, and first, second, and third electrodes. The first region includes first and second partial regions, and a third partial region between the first and second partial regions. The second region includes fourth and fifth partial regions. The fourth partial region overlaps the first partial region. The fifth partial region overlaps the second partial region. The first insulating portion includes first, second, and third insulating regions. The first insulating region is provided between the second insulating region and the third partial region and between the third insulating region and the third partial region. The first electrode is electrically connected to the fourth partial region. The second electrode is away from the first electrode and is electrically connected to the fifth partial region. The third electrode is provided between the first and second electrodes.
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公开(公告)号：US11967641B2
公开(公告)日：2024-04-23
申请号：US18307099
申请日：2023-04-26
发明人： Daimotsu Kato , Yosuke Kajiwara , Akira Mukai , Aya Shindome , Hiroshi Ono , Masahiko Kuraguchi
IPC分类号： H01L29/778 , H01L29/06 , H01L29/20 , H01L29/205 , H01L29/423 , H01L29/66
CPC分类号： H01L29/7783 , H01L29/0653 , H01L29/2003 , H01L29/2006 , H01L29/205 , H01L29/4236 , H01L29/66462
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1−x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1−x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1−x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.
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3.发明授权公开(公告)号：US11677020B2
公开(公告)日：2023-06-13
申请号：US17407851
申请日：2021-08-20
发明人： Daimotsu Kato , Yosuke Kajiwara , Akira Mukai , Aya Shindome , Hiroshi Ono , Masahiko Kuraguchi
IPC分类号： H01L29/205 , H01L29/66 , H01L29/778 , H01L29/20 , H01L29/06 , H01L29/423
CPC分类号： H01L29/7783 , H01L29/0653 , H01L29/2003 , H01L29/205 , H01L29/2006 , H01L29/4236 , H01L29/66462
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1−x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1−x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1−x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.
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公开(公告)号：US11362653B2
公开(公告)日：2022-06-14
申请号：US17018009
申请日：2020-09-11
IPC分类号： H03K17/22 , H01L27/07 , H03K17/687 , H03K17/30 , H01L29/778
摘要： According to one embodiment, a semiconductor device includes a semiconductor member, a gate electrode, a source electrode, a drain electrode, a conductive member, a gate terminal, and a first circuit. The semiconductor member includes a first semiconductor layer including a first partial region and including Alx1Ga1−x1N (0≤x1≤1), and a second semiconductor layer including Alx2Ga1−x2N (0
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公开(公告)号：US11355602B2
公开(公告)日：2022-06-07
申请号：US17015474
申请日：2020-09-09
发明人： Tomoaki Inokuchi , Hiro Gangi , Yusuke Kobayashi , Masahiko Kuraguchi , Kazuto Takao , Ryosuke Iijima , Tatsuo Shimizu , Tatsuya Nishiwaki
IPC分类号： H01L29/417 , H01L29/08 , H01L29/872 , H01L29/739 , H01L29/06 , H01L29/40 , H01L29/78
摘要： According to one embodiment, a semiconductor device includes first, second and third conductive parts, a first semiconductor region, and a first insulating part. A direction from the first conductive part toward the second conductive part is along a first direction. The first semiconductor region includes first, second, and third partial regions. A second direction from the first partial region toward the second partial region crosses the first direction. The third partial region is between the first partial region and the second conductive part in the first direction. The third partial region includes an opposing surface facing the second conductive part. A direction from the opposing surface toward the third conductive part is along the second direction. The first insulating part includes a first insulating region. At least a portion of the first insulating region is between the opposing surface and the third conductive part.
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公开(公告)号：US10916646B2
公开(公告)日：2021-02-09
申请号：US16297776
申请日：2019-03-11
发明人： Daimotsu Kato , Toshiya Yonehara , Hiroshi Ono , Yosuke Kajiwara , Masahiko Kuraguchi , Tatsuo Shimizu
IPC分类号： H01L29/778 , H01L29/205 , H01L29/66 , H01L29/423 , H01L21/285 , H01L29/49
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, and a first insulating film. The first semiconductor region includes a first partial region, a second partial region, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The second semiconductor region includes a sixth partial region and a seventh partial region. The third electrode overlaps the sixth and seventh partial regions. The first insulating film includes a portion provided between the third electrode and the third partial region, between the third electrode and the fourth partial region, between the third electrode and the fifth partial region, between the third electrode and the sixth partial region, and between the third electrode and the seventh partial region.
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公开(公告)号：US10283633B2
公开(公告)日：2019-05-07
申请号：US15899925
申请日：2018-02-20
发明人： Jumpei Tajima , Toshiki Hikosaka , Kenjiro Uesugi , Shigeya Kimura , Masahiko Kuraguchi , Shinya Nunoue
IPC分类号： H01L29/778 , H01L29/66 , H01L29/10 , H01L29/423 , H01L21/308 , H01L29/205 , H01L29/20 , H01L29/417 , H01L21/306
摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first layer, a second layer, a third layer, and an insulating layer. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first layer includes at least one of Alx1Ga1-x1N (0
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公开(公告)号：US11563114B2
公开(公告)日：2023-01-24
申请号：US17158078
申请日：2021-01-26
IPC分类号： H01L29/778 , H01L29/423
摘要： According to one embodiment, a semiconductor device includes first, second, third electrodes, a semiconductor member, and a first compound member. The third electrode is between the first and second electrodes in a first direction from the first to second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first, second, third, fourth, and fifth partial regions. A second direction from the first partial region to the first electrode crosses the first direction. The fourth partial region is between the first and third partial regions in the first direction. The fifth partial region is between the third and second partial regions in the first direction. The second semiconductor region includes first and second semiconductor portions. The first compound member includes first, second and third compound regions.
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公开(公告)号：US11515411B2
公开(公告)日：2022-11-29
申请号：US17232201
申请日：2021-04-16
IPC分类号： H01L31/0256 , H01L21/31 , H01L21/469 , H01L29/778 , H01L29/205 , H01L29/20 , H01L29/423 , H01L29/51 , H01L29/66 , H01L21/28 , H01L21/02
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor layers, a nitride layer, and an oxide layer. A direction from the second electrode toward the first electrode is aligned with a first direction. A position in the first direction of the third electrode is between the first electrode and the second electrode in the first direction. The first semiconductor layer includes first to fifth partial regions. The first partial region is between the fourth and third partial regions in the first direction. The second partial region is between the third and fifth partial regions in the first direction. The nitride layer includes first and second nitride regions. The second semiconductor layer includes first and second semiconductor regions. The oxide layer includes silicon and oxygen. The oxide layer includes first to third oxide regions.
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公开(公告)号：US10964802B2
公开(公告)日：2021-03-30
申请号：US16298172
申请日：2019-03-11
IPC分类号： H01L29/66 , H01L29/778 , H01L29/207 , H01L29/04
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first to third layers, and a first insulating layer. The first layer includes first to fifth partial regions. The first partial region is between the fourth and third partial regions. The second partial region is between the third and fifth partial regions. The first insulating layer includes first and second inter-layer regions. The second layer includes first and second intermediate regions. The first intermediate region is provided between the first partial region and the first inter-layer region. The second intermediate region is provided between the second partial region and the second inter-layer region. The third layer includes first to third nitride regions. The first inter-layer region is between the first intermediate region and the first nitride region. The second inter-layer region is between the second intermediate region and the second nitride region.
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