Invention Grant
- Patent Title: Memory device programming techinique using fewer latches
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Application No.: US17216015Application Date: 2021-03-29
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Publication No.: US11568937B2Publication Date: 2023-01-31
- Inventor: Dung V. Nguyen , Phong Sy Nguyen
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/26 ; G11C7/10 ; G11C16/30
Abstract:
A command to program data to a memory device is received. Target charge levels of a set of memory cells in the memory device for a first programming step are determined based on the data. A first set of indicators are provided to the memory device. The first set of indicators indicate the target charge levels for the first programming step. Target charge levels of the set of memory cells for a second programming step are determined based on the data. A second set of indicators are provided to the memory device. The second set of indicators indicate the target charge levels for the second programming step.
Public/Granted literature
- US20220310164A1 MEMORY DEVICE PROGRAMMING TECHINIQUE USING FEWER LATCHES Public/Granted day:2022-09-29
Information query
