Invention Grant
- Patent Title: Substrate with a buried conductor under an active region for enhanced thermal conductivity and RF shielding
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Application No.: US17064602Application Date: 2020-10-07
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Publication No.: US11569170B2Publication Date: 2023-01-31
- Inventor: Siva P. Adusumilli , Mark David Levy , Ramsey Hazbun , Alvin Joseph , Steven Bentley
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agent David Cain
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/74 ; H01L21/768 ; H01L23/367 ; H01L23/48 ; H01L29/10 ; H01L21/8234 ; H01L27/092 ; H01L29/778 ; H01L29/735
Abstract:
A semiconductor device is provided, the semiconductor device comprising a substrate having merged cavities in the substrate. An active region is over the merged cavities in the substrate. A thermally conductive layer is in the merged cavities in the substrate, whereby the thermally conductive layer at least partially fills up the merged cavities in the substrate. A first contact pillar connects the thermally conductive layer in the merged cavities in the substrate with a metallization layer above the active region.
Public/Granted literature
Information query
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