Invention Grant
- Patent Title: Metal-insulator-metal capacitor structure to increase capacitance density
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Application No.: US17324442Application Date: 2021-05-19
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Publication No.: US11574940B2Publication Date: 2023-02-07
- Inventor: Yimin Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L49/02

Abstract:
Various embodiments of the present disclosure are directed towards a capacitor structure comprising a plurality of first conductive layers that are vertically stacked over one another and overlie a substrate. The plurality of first conductive layers respectively contact an adjacent first conductive layer in a first connection region. A plurality of second conductive layers are respectively stacked between adjacent ones of the plurality of first conductive layers. The plurality of second conductive layers respectively contact an adjacent second conductive layer in a second connection region. A dielectric structure separates the plurality of first conductive layers and the plurality of second conductive layers. At least a portion of a lower first conductive layer in the plurality of first conductive layers directly underlies the second connection region.
Public/Granted literature
- US20210272991A1 METAL-INSULATOR-METAL CAPACITOR STRUCTURE TO INCREASE CAPACITANCE DENSITY Public/Granted day:2021-09-02
Information query
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