Invention Grant
- Patent Title: Treatment for adhesion improvement
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Application No.: US17001179Application Date: 2020-08-24
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Publication No.: US11594410B2Publication Date: 2023-02-28
- Inventor: Ching-Yi Chen , Wei-Yip Loh , Hung-Hsu Chen , Chih-Wei Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L21/02 ; H01L27/088 ; H01L29/78 ; H01L29/417 ; H01L29/66
Abstract:
A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.
Information query
IPC分类:
