- 专利标题: Handling for high resistivity substrates
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申请号: US17226277申请日: 2021-04-09
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公开(公告)号: US11594441B2公开(公告)日: 2023-02-28
- 发明人: Sipeng Gu , Kyu-Ha Shim
- 申请人: Applied Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Nields, Lemack & Frame, LLC
- 主分类号: C23C14/00
- IPC分类号: C23C14/00 ; H01L21/683 ; C23C14/08 ; C23C14/06 ; C23C14/48
摘要:
A method of modifying a high-resistivity substrate so that the substrate may be electrostatically clamped to a chuck is disclosed. The bottom surface is implanted with a resistivity-reducing species. In this way, resistivity of the bottom surface of the substrate may be greatly reduced. In some embodiments, to implant the bottom surface, a coating is applied to the top surface. After application of the coating, the substrate is flipped so that the front surface contacts the top surface of the chuck. The ions are then implanted into the exposed bottom surface to create the low resistivity layer. The resistivity of the low resistivity layer proximate the bottom surface after implant may be less than 1000 ohm-cm. Once the bottom surface has been implanted, the substrate may be processed conventionally. The low resistivity layer may later be removed by wafer backside thinning processes.
公开/授权文献
- US20220328337A1 Handling For High Resistivity Substrates 公开/授权日:2022-10-13
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