Invention Grant
- Patent Title: Handling for high resistivity substrates
-
Application No.: US17226277Application Date: 2021-04-09
-
Publication No.: US11594441B2Publication Date: 2023-02-28
- Inventor: Sipeng Gu , Kyu-Ha Shim
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Nields, Lemack & Frame, LLC
- Main IPC: C23C14/00
- IPC: C23C14/00 ; H01L21/683 ; C23C14/08 ; C23C14/06 ; C23C14/48

Abstract:
A method of modifying a high-resistivity substrate so that the substrate may be electrostatically clamped to a chuck is disclosed. The bottom surface is implanted with a resistivity-reducing species. In this way, resistivity of the bottom surface of the substrate may be greatly reduced. In some embodiments, to implant the bottom surface, a coating is applied to the top surface. After application of the coating, the substrate is flipped so that the front surface contacts the top surface of the chuck. The ions are then implanted into the exposed bottom surface to create the low resistivity layer. The resistivity of the low resistivity layer proximate the bottom surface after implant may be less than 1000 ohm-cm. Once the bottom surface has been implanted, the substrate may be processed conventionally. The low resistivity layer may later be removed by wafer backside thinning processes.
Public/Granted literature
- US20220328337A1 Handling For High Resistivity Substrates Public/Granted day:2022-10-13
Information query
IPC分类: