Invention Grant
- Patent Title: Integrated assemblies and semiconductor memory devices
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Application No.: US17197253Application Date: 2021-03-10
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Publication No.: US11594536B2Publication Date: 2023-02-28
- Inventor: Yong Mo Yang , Mohd Kamran Akhtar , Huyong Lee , Sangmin Hwang , Song Guo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238 ; G11C7/06

Abstract:
Some embodiments include an integrated assembly having a CMOS region with fins extending along a first direction, and with gating structures extending across the fins. A circuit arrangement is associated with the CMOS region and includes a pair of the gating structures spaced by an intervening region having a missing gating structure. The circuit arrangement has a first dimension along the first direction. A second region is proximate to the CMOS region. Conductive structures are associated with the second region. Some of the conductive structures are electrically coupled with the circuit arrangement. A second dimension is a distance across said some of the conductive structures along the first direction. The conductive structures and the circuit arrangement are aligned such that the second dimension is substantially the same as the first dimension. Some embodiments include methods of forming integrated assemblies.
Public/Granted literature
- US20220293598A1 Integrated Assemblies and Semiconductor Memory Devices Public/Granted day:2022-09-15
Information query
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