- 专利标题： Method of preparing semiconductor device with crystalline overlayer
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申请号： US17203016申请日： 2021-03-16
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公开(公告)号： US11594605B2公开(公告)日： 2023-02-28
- 发明人: Te-Yin Chen
- 申请人： NANYA TECHNOLOGY CORPORATION
- 申请人地址： TW New Taipei
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW New Taipei
- 代理机构： Muncy, Geissler, Olds & Lowe, P.C.
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L27/108 ; H01L21/762 ; H01L21/265 ; H01L21/308 ; H01L29/40 ; H01L21/311 ; H01L21/8234 ; H01L21/768
摘要：
The present disclosure provide a method of preparing semiconductor device involving planarization processes. The method includes introducing dopants into the exposed portions of the substrate to form doped portions of the substrate; forming a crystalline overlayer on the doped portions of the substrate, wherein the crystalline overlayer has a conductivity lower than that of the doped portions of the substrate. The crystalline overlayer is formed by an epitaxial growth process, the crystalline overlayer is formed as a saddle shape, and the crystalline overlayer has an excess portion protruding from the substrate.
公开/授权文献
- US20210202493A1 METHOD OF PREPARING SEMICONDUCTOR DEVICE 公开/授权日：2021-07-01
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