Invention Grant
- Patent Title: Integrated circuit device and method of manufacturing the same
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Application No.: US17230509Application Date: 2021-04-14
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Publication No.: US11600569B2Publication Date: 2023-03-07
- Inventor: Su-Hyun Bark , Sang-Hoon Ahn , Young-Bae Kim , Hyeok-Sang Oh , Woo-Jin Lee , Hoon-Seok Seo , Sung-Jin Kang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2017-0029609 20170308
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/532 ; H01L29/16 ; H01L21/311 ; H01L21/768 ; H01L23/528 ; H01L23/522 ; H01L29/417 ; H01L27/088 ; H01L29/78 ; H01L23/485 ; H01L21/8234

Abstract:
An integrated circuit device includes a metal film and a complex capping layer covering a top surface of the metal film. The metal film includes a first metal, and penetrates at least a portion of an insulating film formed over a substrate. The complex capping layer includes a conductive alloy capping layer covering the top surface of the metal film, and an insulating capping layer covering a top surface of the conductive alloy capping layer and a top surface of the insulating film. The conductive alloy capping layer includes a semiconductor element and a second metal different from the first metal. The insulating capping layer includes a third metal.
Public/Granted literature
- US20210233860A1 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-07-29
Information query
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