Invention Grant
- Patent Title: Dielectric fins with air gap and backside self-aligned contact
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Application No.: US17118262Application Date: 2020-12-10
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Publication No.: US11600695B2Publication Date: 2023-03-07
- Inventor: Ko-Cheng Liu , Ming-Shuan Li , Ming-Lung Cheng , Chang-Miao Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/8234 ; H01L29/66 ; H01L27/092 ; H01L23/522

Abstract:
A method includes providing a structure having two fins extending from a substrate and an isolation structure adjacent to lower portions of the fins; forming a cladding layer over the isolation structure and over top and sidewalls of the fins; recessing the isolation structure using the cladding layer as an etch mask to expose the substrate; after the recessing of the isolation structure, depositing a seal layer over the substrate, the isolation structure, and the cladding layer; forming a sacrificial plug over the seal layer and between the two fins; and depositing a dielectric top cover over the sacrificial plug and laterally between the two fins.
Public/Granted literature
- US20210376071A1 DIELECTRIC FINS WITH AIR GAP AND BACKSIDE SELF-ALIGNED CONTACT Public/Granted day:2021-12-02
Information query
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