Invention Grant
- Patent Title: Memory cell and fabricating method of the same
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Application No.: US17853954Application Date: 2022-06-30
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Publication No.: US11600709B2Publication Date: 2023-03-07
- Inventor: Chih-Hao Pan , Chi-Cheng Huang , Kuo-Lung Li , Szu-Ping Wang , Po-Hsuan Chen , Chao-Sheng Cheng
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN202110207969.6 20210224
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/423 ; H01L29/66 ; H01L21/28
Abstract:
A memory cell includes a substrate. A first STI and a second STI are embedded within the substrate. The first STI and the second STI extend along a first direction. An active region is disposed on the substrate and between the first STI and the second STI. A control gate is disposed on the substrate and extends along a second direction. The first direction is different from the second direction. A tunneling region is disposed in the active region overlapping the active region. A first trench is embedded within the tunneling region. Two second trenches are respectively embedded within the first STI and the second STI. The control gate fills in the first trench and the second trenches. An electron trapping stack is disposed between the tunneling region and the control gate.
Public/Granted literature
- US20220336606A1 MEMORY CELL AND FABRICATING METHOD OF THE SAME Public/Granted day:2022-10-20
Information query
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