Invention Grant
- Patent Title: Method for controlling electrochemical deposition to avoid defects in interconnect structures
-
Application No.: US17238080Application Date: 2021-04-22
-
Publication No.: US11603602B2Publication Date: 2023-03-14
- Inventor: Jun-Nan Nian , Shiu-Ko Jangjian , Yu-Ren Peng , Yao-Hsiang Liang , Ting-Chun Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: C25D7/12
- IPC: C25D7/12 ; C25D21/12 ; C25D3/38 ; H01L21/768 ; C25D17/00

Abstract:
A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.
Public/Granted literature
- US20210238765A1 METHOD FOR CONTROLLING ELECTROCHEMICAL DEPOSITION TO AVOID DEFECTS IN INERCONNECT STRUCTURES Public/Granted day:2021-08-05
Information query