公开(公告)号：US11603602B2

公开(公告)日：2023-03-14

申请号：US17238080

申请日：2021-04-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko Jangjian ,  Yu-Ren Peng ,  Yao-Hsiang Liang ,  Ting-Chun Wang

IPC: C25D7/12 ,  C25D21/12 ,  C25D3/38 ,  H01L21/768 ,  C25D17/00

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

公开(公告)号：US11015260B2

公开(公告)日：2021-05-25

申请号：US16698528

申请日：2019-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko Jangjian ,  Yu-Ren Peng ,  Yao-Hsiang Liang ,  Ting-Chun Wang

IPC: C25D17/00 ,  C25D21/12 ,  C25D3/38 ,  H01L21/768

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

公开(公告)号：US10749278B2

公开(公告)日：2020-08-18

申请号：US15132099

申请日：2016-04-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jun-Nan Nian ,  Jyun-Ru Wu ,  Shiu-Ko Jangjian ,  Yu-Ren Peng ,  Chi-Cheng Hung ,  Yu-Sheng Wang

IPC: C25D7/12 ,  H01R4/2433 ,  H02G3/08 ,  C25D3/38 ,  C25D5/16 ,  C25D7/00 ,  H01R13/506 ,  H02G15/06

Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.