Invention Grant
- Patent Title: Photonic semiconductor device and method
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Application No.: US17806527Application Date: 2022-06-13
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Publication No.: US11605622B2Publication Date: 2023-03-14
- Inventor: Chih-Chieh Chang , Chung-Hao Tsai , Chuei-Tang Wang , Hsing-Kuo Hsia , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L23/48 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/31 ; H01L21/56 ; G02B6/12 ; G02B6/122

Abstract:
A method includes forming multiple photonic devices in a semiconductor wafer, forming a v-shaped groove in a first side of the semiconductor wafer, forming an opening extending through the semiconductor wafer, forming multiple conductive features within the opening, wherein the conductive features extend from the first side of the semiconductor wafer to a second side of the semiconductor wafer, forming a polymer material over the v-shaped groove, depositing a molding material within the opening, wherein the multiple conductive features are separated by the molding material, after depositing the molding material, removing the polymer material to expose the v-shaped groove, and placing an optical fiber within the v-shaped groove.
Public/Granted literature
- US20220328466A1 PHOTONIC SEMICONDUCTOR DEVICE AND METHOD Public/Granted day:2022-10-13
Information query
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