Invention Grant
- Patent Title: Semiconductor device having an air gap between gate electrode and source/drain pattern
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Application No.: US17242823Application Date: 2021-04-28
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Publication No.: US11605711B2Publication Date: 2023-03-14
- Inventor: Haejun Yu , Kyungin Choi , Seung Hun Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2020-0112608 20200903
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L21/8238 ; H01L29/423 ; H01L29/775 ; H01L27/092 ; H01L29/10 ; H01L29/08 ; H01L29/417 ; H01L29/49 ; H01L29/161 ; H01L29/165 ; H01L29/786 ; H01L29/78 ; B82Y10/00

Abstract:
A semiconductor device includes an active pattern on a substrate, a source/drain pattern on the active pattern, a channel pattern connected to the source/drain pattern, the channel pattern including semiconductor patterns stacked and spaced apart from each other, a gate electrode extending across the channel pattern, and inner spacers between the gate electrode and the source/drain pattern. The semiconductor patterns include stacked first and second semiconductor patterns. The gate electrode includes first and second portions, which are sequentially stacked between the substrate and the first and second semiconductor patterns, respectively. The inner spacers include first and second air gaps, between the first and second portions of the gate electrode and the source/drain pattern. The largest width of the first air gap is larger than that of the second air gap.
Public/Granted literature
- US20220069078A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-03-03
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