Invention Grant
- Patent Title: Resonance enhanced surface illuminated sub-bandgap infrared photodetectors
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Application No.: US17032223Application Date: 2020-09-25
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Publication No.: US11605752B2Publication Date: 2023-03-14
- Inventor: Amir H. Atabaki , Rajeev J. Ram , Ebrahim Dakhil Al Johani
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Smith Baluch LLP
- Main IPC: H01L31/105
- IPC: H01L31/105 ; H01L31/0368 ; H01L27/146

Abstract:
Photodetectors using photonic crystals (PhCs) in polysilicon film that include an in-plane resonant defect. A biatomic photodetector includes an optical defect mode that is confined from all directions in the plane of the PhC by the photonic bandgap structure. The coupling of the resonance (or defect) mode to out-of-plane radiation can be adjusted by the design of the defect. Further, a “guided-mode resonance” (GMR) photodetector provides in-plane resonance through a second-order grating effect in the PhC. Absorption of an illumination field can be enhanced through this resonance.
Public/Granted literature
- US20210091252A1 Resonance Enhanced Surface Illuminated Sub-Bandgap Infrared Photodetectors Public/Granted day:2021-03-25
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