- 专利标题： Method of producing semiconductor sintered body, electrical/electronic member, and semiconductor sintered body
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申请号： US16612850申请日： 2018-05-17
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公开(公告)号： US11616182B2公开(公告)日： 2023-03-28
- 发明人: Naoki Sadayori
- 申请人： NITTO DENKO CORPORATION
- 申请人地址： JP Ibaraki
- 专利权人： NITTO DENKO CORPORATION
- 当前专利权人： NITTO DENKO CORPORATION
- 当前专利权人地址： JP Ibaraki
- 代理机构： Hauptman Ham, LLP
- 优先权： JPJP2017-100107 20170519,JPJP2017-100108 20170519,JPJP2017-199057 20171013
- 国际申请： PCT/JP2018/019160 WO 20180517
- 国际公布： WO2018/212296 WO 20181122
- 主分类号： H01L35/18
- IPC分类号： H01L35/18 ; H01L35/22 ; H01L35/26 ; H01L35/24 ; H01L35/28 ; C01B33/06 ; H01L35/34 ; B28B11/24 ; B22F3/10 ; B22F3/105 ; B82Y30/00
摘要：
A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body includes silicon or a silicon alloy, wherein the average grain size of the crystal grains forming the polycrystalline body is 1 μm or less, and wherein nanoparticles including one or more of a carbide of silicon, a nitride of silicon, and an oxide of silicon are present at a grain boundary of the grains.
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