Invention Grant
- Patent Title: Blocking structures on isolation structures
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Application No.: US17181710Application Date: 2021-02-22
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Publication No.: US11621165B2Publication Date: 2023-04-04
- Inventor: Yu-Hsuan Yang , Wen Han Hung , Tzy-Kuang Lee , Chia Ying Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L29/06 ; H01L21/266 ; H01L21/762 ; H01L29/40 ; H01L29/808 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.
Public/Granted literature
- US20210175071A1 Blocking Structures on Isolation Structures Public/Granted day:2021-06-10
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