Invention Grant
- Patent Title: Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction
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Application No.: US17166301Application Date: 2021-02-03
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Publication No.: US11630168B2Publication Date: 2023-04-18
- Inventor: Rémy Lassalle-Balier , Maxime Rioult
- Applicant: Allegro MicroSystems, LLC
- Applicant Address: US NH Manchester
- Assignee: Allegro MicroSystems, LLC
- Current Assignee: Allegro MicroSystems, LLC
- Current Assignee Address: US NH Manchester
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: G01R33/09
- IPC: G01R33/09 ; H10N50/85 ; H10N50/80 ; H10N50/10 ; H01L43/10 ; H01L43/02 ; H01L43/08
Abstract:
In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction. The second spin valve includes a second set of reference layers having a magnetization direction in the first direction and a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction. The first direction is neither parallel nor antiparallel to a direction of an expected magnetic field.
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