- 专利标题: Page buffer circuit and memory device including the same
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申请号: US17207398申请日: 2021-03-19
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公开(公告)号: US11646064B2公开(公告)日: 2023-05-09
- 发明人: Yongsung Cho , Inho Kang , Taehyo Kim , Jeunghwan Park , Jinwoo Park
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Muir Patent Law, PLLC
- 优先权: KR 20200089163 2020.07.17
- 主分类号: G11C7/10
- IPC分类号: G11C7/10 ; G11C7/12
摘要:
Provided are a page buffer and a memory device including the same. A memory device includes: a memory cell array including a plurality of memory cells; and a page buffer circuit including page buffer units in a first horizontal direction, the page buffer units being connected to the memory cells via bit lines, and cache latches in the first horizontal direction, the cache latches corresponding to the page buffer units, wherein each of the page buffer units includes one or more pass transistors connected to a sensing node of each of the plurality of page buffer units, the sensing node electrically connected to a corresponding bit line. Each sensing node included in each of the page buffer units and the combined sensing node are electrically connected to each other through the pass transistors.
公开/授权文献
- US20220020404A1 PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME 公开/授权日:2022-01-20
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