Invention Grant
- Patent Title: Page buffer circuit and memory device including the same
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Application No.: US17207398Application Date: 2021-03-19
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Publication No.: US11646064B2Publication Date: 2023-05-09
- Inventor: Yongsung Cho , Inho Kang , Taehyo Kim , Jeunghwan Park , Jinwoo Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20200089163 2020.07.17
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/12

Abstract:
Provided are a page buffer and a memory device including the same. A memory device includes: a memory cell array including a plurality of memory cells; and a page buffer circuit including page buffer units in a first horizontal direction, the page buffer units being connected to the memory cells via bit lines, and cache latches in the first horizontal direction, the cache latches corresponding to the page buffer units, wherein each of the page buffer units includes one or more pass transistors connected to a sensing node of each of the plurality of page buffer units, the sensing node electrically connected to a corresponding bit line. Each sensing node included in each of the page buffer units and the combined sensing node are electrically connected to each other through the pass transistors.
Public/Granted literature
- US20220020404A1 PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2022-01-20
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