Invention Grant
- Patent Title: High resistivity single crystal silicon ingot and wafer having improved mechanical strength
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Application No.: US17471453Application Date: 2021-09-10
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Publication No.: US11655559B2Publication Date: 2023-05-23
- Inventor: Soubir Basak , Igor Peidous , Carissima Marie Hudson , HyungMin Lee , ByungChun Kim , Robert J. Falster
- Applicant: GlobalWafers Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: GlobalWafers Co., Ltd.
- Current Assignee: GlobalWafers Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Armstrong Teasdale LLP
- Main IPC: C30B29/06
- IPC: C30B29/06 ; C30B15/00 ; C30B15/10 ; C30B15/30 ; H01L21/02 ; H01L21/28
Abstract:
A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.
Public/Granted literature
- US20210404088A1 HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPROVED MECHANICAL STRENGTH Public/Granted day:2021-12-30
Information query
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