- 专利标题： Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells
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申请号： US17409341申请日： 2021-08-23
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公开(公告)号： US11657873B2公开(公告)日： 2023-05-23
- 发明人: Perng-Fei Yuh , Yih Wang , Ku-Feng Lin , Jui-Che Tsai , Hiroki Noguchi , Fu-An Wu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Foley & Lardner LLP
- 主分类号： G11C14/00
- IPC分类号： G11C14/00 ; G11C11/419 ; G11C11/16
摘要：
Disclosed herein is an integrated circuit including multiple magnetic tunneling junction (MTJ) cells coupled to a static random access memory (SRAM). In one aspect, the integrated circuit includes a SRAM having a first port and a second port, and a set of pass transistors coupled to the first port of the SRAM. In one aspect, the integrated circuit includes a set of MTJ cells, where each of the set of MTJ cells is coupled between a select line and a corresponding one of the set of pass transistors.
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