- 专利标题： Vertically stacked transistors in a fin
-
申请号： US17385688申请日： 2021-07-26
-
公开(公告)号： US11658072B2公开(公告)日： 2023-05-23
- 发明人: Aaron D. Lilak , Sean T. Ma , Justin R. Weber , Patrick Morrow , Rishabh Mehandru
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Finch & Maloney PLLC
- 分案原申请号： US16475032
- 主分类号： H01L21/822
- IPC分类号： H01L21/822 ; H01L21/02 ; H01L21/225 ; H01L21/265 ; H01L21/683 ; H01L21/762 ; H01L21/8234 ; H01L27/088 ; H01L29/167 ; H01L29/40 ; H01L29/66
摘要：
An apparatus is provided which comprises: a fin; a layer formed on the fin, the layer dividing the fin in a first section and a second section; a first device formed on the first section of the fin; and a second device formed on the second section of the fin.
公开/授权文献
- US20210351078A1 VERTICALLY STACKED TRANSISTORS IN A FIN 公开/授权日：2021-11-11
信息查询
IPC分类:
