发明授权
- 专利标题: Image sensor
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申请号: US17521218申请日: 2021-11-08
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公开(公告)号: US11658193B2公开(公告)日: 2023-05-23
- 发明人: Kang Sun Lee , Seung Ho Shin , Hyung Jin Bae , Jin Ho Seo , Ji Hun Shin , Moo Sup Lim , Young Tae Jang , Young Kyun Jeong
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR 20180008297 2018.01.23 KR 20180060446 2018.05.28 KR 20180110823 2018.09.17
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H04N5/355 ; H04N5/353 ; H04N5/3745 ; H01L31/0203
摘要:
An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.
公开/授权文献
- US20220059588A1 IMAGE SENSOR 公开/授权日:2022-02-24
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