利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.019 秒)

    Image sensor
    1.
    发明授权
    Image sensor 有权

    公开(公告)号：US10950640B2

    公开(公告)日：2021-03-16

    申请号：US16551114

    申请日：2019-08-26

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Young Gu Jin ,  Yong Hun Kwon ,  Young Chan Kim ,  Sae Young Kim ,  Sung Young Seo ,  Moo Sup Lim ,  Tae Sub Jung ,  Sung Ho Choi

    IPC分类号： H01L27/146

    摘要： An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.

    IMAGE SENSOR
    4.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20200235152A1

    公开(公告)日：2020-07-23

    申请号：US16840663

    申请日：2020-04-06

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Kang Sun Lee ,  Seung Ho Shin ,  Hyung Jin Bae ,  Jin Ho Seo ,  Ji Hun Shin ,  Moo Sup Lim ,  Young Tae Jang ,  Young Kyun Jeong

    IPC分类号： H01L27/146 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/353

    摘要： An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

    IMAGE SENSORS AND DISTANCE MEASURING DEVICES USING THE SAME
    6.
    发明申请
    IMAGE SENSORS AND DISTANCE MEASURING DEVICES USING THE SAME 审中-公开

    公开(公告)号：US20200174133A1

    公开(公告)日：2020-06-04

    申请号：US16427576

    申请日：2019-05-31

    申请人： Samsung Electronics Co., Ltd.

    发明人： Young Gu JIN ,  Young Chan Kim ,  Tae sub Jung ,  Young Hun Kwon ,  Sung Young Seo ,  Moo Sup Lim ,  Sung Ho Choi

    IPC分类号： G01S17/89 ,  H01L27/146 ,  G01S17/08

    摘要： An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.

    Image sensors and distance measuring devices using the same
    7.
    发明授权
    Image sensors and distance measuring devices using the same 有权

    公开(公告)号：US11525922B2

    公开(公告)日：2022-12-13

    申请号：US16427576

    申请日：2019-05-31

    申请人： Samsung Electronics Co., Ltd.

    发明人： Young Gu Jin ,  Young Chan Kim ,  Tae Sub Jung ,  Yong Hun Kwon ,  Sung Young Seo ,  Moo Sup Lim ,  Sung Ho Choi

    IPC分类号： H01L27/146 ,  G01S17/89 ,  G01S17/08

    摘要： An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.

    Image sensor and imaging device
    8.
    发明授权
    Image sensor and imaging device 有权

    公开(公告)号：US11456327B2

    公开(公告)日：2022-09-27

    申请号：US16524806

    申请日：2019-07-29

    申请人： Samsung Electronics Co., Ltd.

    发明人： Young Gu Jin ,  Young Chan Kim ,  Yong Hun Kwon ,  Eung Kyu Lee ,  Chang Keun Lee ,  Moo Sup Lim ,  Tae Sub Jung

    IPC分类号： H01L27/146 ,  H01L31/167

    摘要： An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.

    IMAGE SENSOR AND IMAGING DEVICE
    9.
    发明申请
    IMAGE SENSOR AND IMAGING DEVICE 审中-公开

    公开(公告)号：US20200286942A1

    公开(公告)日：2020-09-10

    申请号：US16524806

    申请日：2019-07-29

    申请人： Samsung Electronics Co., Ltd.

    发明人： Young Gu JIN ,  Young Chan Kim ,  Yong Hun Kwon ,  Eung Kyu Lee ,  Chang Keun Lee ,  Moo Sup Lim ,  Tae Sub Jung

    IPC分类号： H01L27/146 ,  H01L31/167

    摘要： An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.