Invention Grant
- Patent Title: MOSFET device with undulating channel
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Application No.: US17248160Application Date: 2021-01-12
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Publication No.: US11658214B2Publication Date: 2023-05-23
- Inventor: Kevin Kyuheon Cho , Bongyong Lee , Kyeongseok Park , Doojin Choi , Thomas Neyer , Ki Min Kim
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Scottsdale
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/78 ; H01L29/16 ; H01L29/66

Abstract:
A SiC MOSFET device with alternating p-well widths, including an undulating channel, is described. The undulating channel provides current paths of multiple widths, which enables optimization of on-resistance, transconductance, threshold voltage, and channel length. The multi-width p-well region further defines corresponding multi-width Junction FETs (JFETs). The multi-width JFETs enable improved response to a short-circuit event. A high breakdown voltage is obtained by distributing a high electric field in a JFET of a first width into a JFET of a second width.
Public/Granted literature
- US20220223691A1 MOSFET DEVICE WITH UNDULATING CHANNEL Public/Granted day:2022-07-14
Information query
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